Everspin MRAM是一种具有革命性的存储器，其原理是利用电子自旋的磁性结构，来提供不会产生损耗的非挥发特性。Everspin MRAM可在集成了硅电路的磁性材料中存储信息，以在单一、可无限使用的组件中提供SRAM的速度以及闪存的非挥发特性。Everspin是从飞思卡尔半导体公司分离出来的一家独立公司。2006年，Everspin推出业界第一款商业化MRAM产品。今日，Everspin MRAM已广泛用在数据存储、工业自动化、游戏、能源管理、通讯、运输、和航空电子领域。 The ES1GB-U201 is a U.2 form factor NVMe card based on Everspin’s STT-MRAM products and Simultaneous Block mode (NVMe) and Byte Mode (PCIe Direct Memory Access). They offer extremely low and predictable latency and are power fail safe without system support requirements.
| Highlights | Applications |  |
| • 1GB Storage Capacity | • Power Fail Safe Data & Metadata Cache/Buffer | |
| • PCIe Gen3 x4 | • Burst Data Deserializer | |
| • U.2 2.5” form factor | • Database and Application Accelerators | |
| • NVMe 1.1+ in block mode | • Storage Accelerator For All Flash Storage | |
| • Memory mapped IO (MMIO) in byte mode | Array (FSA) | |
| • Ultra-low access latency (uS) | • File System Accelerator (Parallel & Serial) | |
| • Consistent latency (short tail) | • Power Fail Safe Software Defined Storage | |
| • Customer defined features using own RTL | • Power Fail Safe Software And NVMe RAID | |
| with programmable FPGA | • OLTP Log Cache Acceleration | |
| • Development license for NVMe core IP | • Storage Fabric (Network) Accelerators | |
| • Shared Remote Persistent Memory |
