Silicon carbide is a compound semiconductor with excellent mechanical strength, thermal stability and chemical stability. Its Mohs hardness is 9 and its melting point is 2830°C. It can only be etched with pure KOH solution at 600°C. Compared with the 1.12eV of silicon, the extremely high energy gap of 3.26eV of silicon carbide makes silicon carbide have the advantages of withstand voltage, high efficiency, stability, and heat dissipation.
Fast SiC semiconductor lnc. is a fabless design company specializing in sic power components. It mainly provides 650V~1700V SiC MOSFETs and SiC diodes. Currently, the only SIC MOSFET design can be used with conventional 12v silicon-based gate drivers. At present, the main application areas of silicon carbide will be in the high-power power supply market and various applications in extreme environments.
| Product No. |
Drain-source Voltage[V] |
Drain-source On-state Resistance(Typ.) [mΩ] |
Package |
Download |
| FF06030Q |
650 |
30 |
TO-247-4L |
NULL |
| FF06100G |
650 |
100 |
DFN8x8 |
NULL |
| FL06100C |
650 |
100 |
TO-220-3L |
NULL |
| FF06100D |
650 |
100 |
TO-220FP |
NULL |
| FL06100D |
650 |
100 |
TO-220FP |
NULL |
| FF06100F |
650 |
100 |
TOLL |
NULL |
| FL06150A |
650 |
150 |
DPAK(MSL 1) |
NULL |
| FF06320A |
650 |
320 |
DPAK(MSL 1) |
NULL |
| FL06320A |
650 |
320 |
DPAK(MSL 1) |
NULL |
| FF06320B |
650 |
320 |
PQFN5x6(MSL 1) |
NULL |
| FL06320B |
650 |
320 |
PQFN5x6(MSL 1) |
NULL |
| FL06320G |
650 |
320 |
DFN8x8 |
NULL |
| FF061K4 |
650 |
1400 |
DPAK(MSL 1) |
NULL |
| FF12040F |
1200 |
40 |
TO-247-3L |
NULL |
| FF12040Q |
1200 |
40 |
TO-247-4L |
NULL |
| FL12190A |
1200 |
190 |
DPAK(MSL 1) |
NULL |
| FL12190G |
1200 |
190 |
DFN8x8 |
NULL |
| FL12190I |
1200 |
190 |
SOIC-8 |
NULL |
| FF17900E |
1700 |
900 |
TO-247-3L |
NULL |
| FF17900Q |
1700 |
900 |
TO-247-4L |
NULL |
